Abstract
AbstractA new device structure with four epitaxial layers and a recessed gate is proposed for normally‐off operation in GaN‐FETs. Employment of this structure makes it possible to control accurately the threshold voltage without accurate control of recess etching depth. The high breakdown voltage and the low on‐resistance of the fabricated devices are also reported. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
