Abstract
The infrared absorption and photoresponse characteristics of n-type GaAs/AlxGa1−xAs multiple quantum wells infrared photodetector structure have been studied. With the normal incidence light, a detectivity D (8.7 μm) = 1.4 × 10★cm Hz★/W via free-carrier absorption in the wells is achieved at 77 K. This shows a possible fabrication of normal incidence quantum wells infrared photodetector without a grating coupler.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
