Abstract
Porous SiCOH films are of great interest in semiconductor fabrication due to their low-dielectric constant properties. Post-deposition treatments using ultraviolet (UV) light on organosilicate thin films are required to decompose labile pore generators (porogens) and to ensure optimum network formation to improve the electrical and mechanical properties of low-k dielectrics. The goal of this work is to choose the best vacuum-ultraviolet photon energy in conjunction with vacuum ultraviolet (VUV) photons without the need for heating the dielectric to identify those wavelengths that will have the most beneficial effect on improving the dielectric properties and minimizing damage. VUV irradiation between 8.3 and 8.9 eV was found to increase the hardness and elastic modulus of low-k dielectrics at room temperature. Combined with UV exposures of 6.2 eV, it was found that this “UV/VUV curing” process is improved compared with current UV curing. We show that UV/VUV curing can overcome drawbacks of UV curing and improve the properties of dielectrics more efficiently without the need for high-temperature heating of the dielectric.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
