Abstract
The chemical quantitative composition, phase constitution, and crystal structure of doped with In lead telluride films on Si (1 0 0) or SiO 2/Si (1 0 0) substrates have been studied in this work. By EPMA and atomic absorption measurements, it has been found that the concentration of In atoms y In varied from 0.0011 to 0.045 in these deposited Pb 1− y In y Te films. The results of EPMA, SEM, and X-ray diffraction (XRD) measurements show that formation of In solid solutions in lead telluride matrix revealed not only in PbTe–InTe cross-section, but in PbTe–In 2Te 3 pseudobinary system also. The results of XRD show that the lattice parameter a PbTe of PbTe〈In〉/Si and PbTe〈In〉/SiO 2/Si heterostructures is described by nonmonotone function and does not obey the Vegard's law within concentration interval 0.0011⩽ y In⩽0.045.
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