Abstract
AbstractEr‐related photoluminescence (PL) properties have been investigated in Er,O‐codoped GaAs (GaAs:Er,O) grown by organometallic vapor phase epitaxy. The GaAs:Er,O which was slightly doped with Er exhibited both strong Er‐related and band‐edge luminescence. In the temperature dependence of the Er‐related PL intensity, the intensity decreased with increasing temperature from 4.2 K to 30 K. The temperature region was quite coincident with the region where the Carbon‐related PL intensity decreased. This behaviour implies the existence of a Carbon‐related nonradiative process in GaAs. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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