Abstract
We found an anomalous Eu-related luminescence peak in the temperature dependence of photoluminescence (PL) spectra in Eu-doped gallium nitride (GaN:Eu) grown by organometallic vapor phase epitaxy. Its PL intensity increased with increasing temperature and reached a maximum around 140 K, while the main peak intensities decreased monotonically in this region. Time-resolved PL measurements (TR-PL) revealed a delayed increase of PL intensity after the laser pulse. An analysis of the characteristics hereof indicated that the mechanism behind this afterglow is thermally activated and its transfer efficiency is dependent on the excitation intensity. We developed a model that explains these results, where excitation of the Eu ions associated to this peak takes place via two different carrier traps.
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