Abstract
AbstractWe investigated the luminescence properties of the Eu‐doped GaN (GaN:Eu) grown at atmospheric (100 kPa) and low (10 kPa) pressures by organometallic vapor phase epitaxy (OMVPE). Although Eu concentration of atmospheric pressure GaN:Eu (AP‐GaN:Eu) is lower than that of low pressure GaN:Eu (LP‐GaN:Eu), the integrated photoluminescence (PL) intensity of the AP‐GaN:Eu was 10 times higher than that of the LP‐GaN:Eu (A. Nishikawa et al., Appl. Phys. Lett. 97, 051113 (2010)). Temperature dependent PL and time‐resolved PL measurements revealed that the improved PL intensity was attributed to the higher crystal quality of the AP‐GaN:Eu compared to that of the LP‐GaN:Eu, which resulted in the enhancement of the energy transfer efficiency from the GaN host material to the Eu ions and in the increase in the number of optically active Eu ions.
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