Abstract
Room temperature photoluminescence (PL) and piezoelectric photothermal (PPT) spectroscopy were successfully performed on two different ZnS epitaxial layers grown by pyrolytic MOVPE on GaAs(100) by using diethyldisulphide (Et 2 S 2 ) as sulphur precursor at 390 °C and 435 °C. PL spectra allowed to identify several radiative recombination channels [namely, self-activated (SA) bands] associated to deep centres. Intense SA band occurred in PL and in PPT spectra recorded from ZnS grown at low temperature, indicating that RT radiative and non-radiative transitions both increases with decreasing the growth temperature below 400°C.
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