Abstract
The photoluminescence (PL) and piezoelectric photothermal (PPT) spectroscopy of the nondoped and Al-doped ZnSe single crystals were carried out between liquid helium and room temperatures. Two signals were obtained in the Al-doped ZnSe crystal in the PPT spectrum at liquid nitrogen temperature. These signals were due to the Al-related defects because the signals were not observed in the nondoped ZnSe crystal. The emission band which was due to the Al-related defects were observed in the PL spectrum at liquid nitrogen temperature. Therefore, it was deduced that the Al atom in the ZnSe crystal acted as the nonradiative and radiative carrier recombination centers at liquid nitrogen temperature. At room temperature, one broad band, Al-related defects, was clearly observed in the PL spectrum of the Al-doped ZnSe crystal. On the other hand, no emission peak was present in the nondoped ZnSe crystal. Therefore, the PL emission, the radiative carrier recombination process, could be observed by the Al-doping. In addition, it was clear that the PPT signal, the nonradiative carrier recombination process, decreased by the Al-doping.
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