Abstract
A gradient of electron (hole) effective masses creates in semiconductors an internal electric field of frequency twice that of the applied field. The internal field is parallel to this gradient and is perpendicular to the variable applied field. This “warm carrier” effect has been measured in epitaxial Cd x Hg 1− x Te layers of various molar compositions. Measurements were performed at 77 and 300 K, with the frequency of applied field in the range 20 Hz to 12.5 kHz. A comparison between the simple model and the observed experimental data is discussed.
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