Abstract
Non-Isothermal simulations to understand Short-Circuit (SC) behavior of SiC MOSFETs were performed. Using the established model, structures to enhance the SC ruggedness were proposed. Thin gate oxide and a narrow JFET region are shown to reduce saturation current enhancing SC ruggedness without increasing R on,sp . Results indicate thin gate oxide offers moderate improvement in SC capability, at the cost of increased C gs . In contrast, narrow JFET region provides much improved (2×) SC ruggedness, as well as lower R on,sp , with no negative impact on C gs .
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