Abstract
Although the hybrid switch consisting of high power Si IGBT and low power SiC MOSFET achieves reduction of losses and cost, there is a severe concern of its short-circuit capability due to its internal SiC MOSFET with small die size. Experimental study shows that the short-circuit capability of hybrid switch is limited by that of SiC MOSFET. The physical mechanism of short-circuit capability of SiC MOSFET is investigated, indicating that relatively low gate drive voltage is recommended to increase hybrid switch's short-circuit capability. Two types of short circuit failure modes of the SiC/Si hybrid switch were experimentally studied. Then, the impact of gate control sequence on the short circuit capability of the hybrid switch is analyzed. Finally, the parallel crosstalk in the hybrid switch during the short circuit period and its mechanism are discussed, and an improved method is suggested.
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