Abstract
By evaluating dark lock-in thermography images taken at one reverse and three forward biases, images of all two-diode-parameters J 01, J 02, n (ideality factor of J 02), and G p (the parallel Ohmic conductivity) of the dark current–voltage characteristic are obtained. A local series resistance is explicitly considered and may be provided as a series resistance image, e.g. resulting from luminescence imaging. The results enable a separate investigation of factors influencing the depletion region recombination current and the diffusion current, which is governed by the bulk lifetime. Local I–V characteristics of special sites may be simulated.
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