Abstract
By evaluating dark lock-in thermography images taken at one reverse and three forward biases, images of all two-diode-parameters J 01 , J 02 , n 2 (ideality factor of J 02 ), and G p (the parallel ohmic conductivity) are obtained. A local series resistance is explicitly considered and may be provided as a series resistance image, e.g. resulting from luminescence imaging. The results allow a separate investigation of factors influencing the depletion region recombination current and the bulk lifetime-governed diffusion current.
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