Abstract
A planar mapping electron-beam-induced current (EBIC) method was applied to analyze the crystal defects in 4H-SiC epilayers for the first time. The crystal defects such as dislocations and subgrain boundaries could be clearly observed using 0.02-µm-thick nickel Schottky contacts formed on the whole 4H-SiC surface. A basal plane dislocation was peculiarly displayed as a streamlike shape in the EBIC image. The relation between the resolution of images and the accelerating voltage in the devised EBIC method is discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
