Abstract
In this work, we explore the material potential of yttrium-content GeO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> (YGO) in the design of a charge-trapping gate stack for embedded non-volatile memory (eNVM), which can share common gate stack materials with Ge logic CMOS. Based on a deep understanding of YGO, we propose a Ge eNVM with an oxidation-induced self-assembled YGO layer as the charge trapping layer. An eNVM fabricated on Ge offers a fast program/erase (P/E) speed (50 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{s}$ </tex-math></inline-formula> and 2 ms for program and erase operations, respectively), low-voltage operation, a data retention lifetime of >10 years, and an endurance of > 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> P/E cycles.
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