Abstract
Non Visual Defects (NVD) is a category of defects that cause electrical failures but are not detected with visual wafer inspection tools. Our approach for NVD detection is based on the Kelvin probe surface voltage mapping technique. The detection of defects is enhanced using field-effect created in a non-contact manner by corona charge deposition on the surface of semiconductor. Precise defect location is accomplished with surface voltage gradient magnitude mapping that enhances delineation of defects. Detected defects are characterized locally using the corona-voltage technique or isothermal voltage transient decay analysis. Presented examples include: dielectric charge and interfacial defect mapping on 300mm Si wafers; deep level emission mapping on epitaxial SiC and mobile ion mapping in Si solar cells.
Published Version
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