Abstract
—The paper presents a novel P-type molybdenum ditelluride (MoTe2) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) designed for high sensitivity hydrogen sensing applications. Through the utilization of palladium at the source-drain charge plasma electrode, P+ regions at both ends are generated, obviating the necessity for low-dimensional MoTe2 doping. Simultaneously, the inclusion of palladium on both regions act as the sensing area, resulting in notably heightened sensitivity. The study employs Non-Equilibrium Green's Function (NEGF) formalism to investigate the carrier transport properties of the device. The results provide valuable insights into less explored area of p-type MOSFET performance as Hydrogen(H2) gas sensor and its potential.
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