Noise processes and their origin in Mg-doped GaN

Abstract

We investigated p-type epitaxial GaN:Mg materials using low frequency noise spectroscopy. The noise signal consists of a generation-recombination related contribution and a 1/f tail the causes of which are incompletely understood. The magnitude of the 1/f noise is affected by defect traps located either in the bulk material or at the surface. The generation-recombination noise is attributed to a metastable DX-like center.