Abstract
This paper brings a comparison of the traps identified in triple-gate FinFETS and Gate-All-Around (GAA) nanowire (NW) MOSFETs built with the same technological process. Traps have been identified using low frequency noise (LFN) spectroscopy, giving information on which process steps may be improved in order to build better devices.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have