On trap identification in triple-gate FinFETs and Gate-All-Around nanowire MOSFETs using low frequency noise spectroscopy

D Boudier,B Cretu,N Collaert,A Veloso,E Simoen

doi:10.1109/icnf.2017.7985990

On trap identification in triple-gate FinFETs and Gate-All-Around nanowire MOSFETs using low frequency noise spectroscopy

D Boudier, B Cretu + Show 3 more

https://doi.org/10.1109/icnf.2017.7985990

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Publication Date: Jun 1, 2017

Citations: 5

Affiliation: Université de Caen Normandie, Normandie Université, IMEC

#Low Frequency Noise Spectroscopy #Nanowire MOSFETs + Show 8 more

Abstract
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Abstract

This paper brings a comparison of the traps identified in triple-gate FinFETS and Gate-All-Around (GAA) nanowire (NW) MOSFETs built with the same technological process. Traps have been identified using low frequency noise (LFN) spectroscopy, giving information on which process steps may be improved in order to build better devices.

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