Abstract
This paper is concerned with the analysis of the noise properties of NPN bipolar junction transistors fabricated in a monolithic technology. Such devices are part of a BiCMOS silicon on insulator process, whose suitability for radiation hard applications is being evaluated. A thorough noise characterization, including series and parallel contribution measurements, was performed in view of the design of high-speed analog front-end electronics for radiation detectors. For this purpose, a method for optimizing the noise performances of charge measuring systems has been applied to the experimental data from single device characterization.
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