Low frequency noise in complementary npn and pnp polysilicon emitter bipolar junction transistors

Abstract

Low frequency noise characteristics of high voltage, high performance complementary polysilicon emitter bipolar transistors are described. The influence of the base biasing resistance, emitter geometry and temperature on the noise spectra are discussed. The npn transistors studied exhibited 1/ f and shot noise, but the pnp transistors are characterized by significant generation–recombination noise contributions to the total noise. For both types of transistors, the measured output noise is determined primarily by the noise sources in the polysilicon–monosilicon interface. The level of the 1/ f noise is proportional to the square of the base current for both npn and pnp transistors. The contribution of the 1/ f noise in the collector current is also estimated. The area dependence of 1/ f noise in both types of transistors as well as other npn bipolar transistors are presented.