A comparison of the reliability of 60Coγ ray irradiation on bulk-Si substrate and SOI substrate DPSA bipolar transistors

P J Zhang,Y Zhong,J C Jia,X Wu,Q N Yi,W Lu,Y H Yang,W S Chen,K F Zhu

doi:10.1109/icsict.2016.7998686

A comparison of the reliability of 60Coγ ray irradiation on bulk-Si substrate and SOI substrate DPSA bipolar transistors

P J Zhang, Y Zhong + Show 7 more

https://doi.org/10.1109/icsict.2016.7998686

Copy DOI

Publication Date: Oct 1, 2016

#NPN Bipolar Transistors #Double Polysilicon Self-aligned Bipolar Transistors + Show 8 more

Abstract
Full-Text PDF
Similar Papers

Abstract

A comparative investigation of the reliability of 60Coγ ray irradiation on bulk-Si substrate and SOI substrate double polysilicon self-aligned (DPSA) NPN bipolar transistors is presented. Bulk silicon based DPSA NPN transistors show severe current gain degradation at low injection level, and a monotonic increase in current gain degradation with decreasing Emitter-Base (E-B) voltage is observed. SOI substrate DPSA NPN bipolar junction transistors (BJTs) show much better radiation hardness performance than their counterpart bulk-silicon substrate BJTs.

Full Text