Abstract
A comparative investigation of the reliability of 60Coγ ray irradiation on bulk-Si substrate and SOI substrate double polysilicon self-aligned (DPSA) NPN bipolar transistors is presented. Bulk silicon based DPSA NPN transistors show severe current gain degradation at low injection level, and a monotonic increase in current gain degradation with decreasing Emitter-Base (E-B) voltage is observed. SOI substrate DPSA NPN bipolar junction transistors (BJTs) show much better radiation hardness performance than their counterpart bulk-silicon substrate BJTs.
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