Abstract
The time dependence of the N KL 2 L 2 Auger signal intensity has been utilized to study the difference in nitrogen diffusion rates in thin layers of molybdenum nitride formed by reaction of a 100eV N 2 + ion beam on flash-cleaned (FS) and sputter-cleaned (SS) surfaces of a Mo sample. It was found for the SS that, owing to enhanced diffusion due to radiation damage (by the pretreatment), the nitride concentration relaxes to a homogeneous steady state in the damaged surface layer during reaction with the N 2 + beam and does not change significantly afterwards. The initial FS nitride layer, on the other hand, is not homogeneous and relaxes slowly by diffusion to reduce the concentration gradient.
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