NIR self-powered photodetection and gate tunable rectification behavior in 2D GeSe/MoSe2 heterojunction diode

Muhammad Hussain,Cong Dinh Nguyen,Jongwan Jung,Sajjad Hussain,Sohail Abbas,Sikandar Aftab,Asif Ali,Muhammad Riaz,Syed Hassan Abbas Jaffery,Yongho Seo

doi:10.1038/s41598-021-83187-z

Muhammad Hussain, Cong Dinh Nguyen + Show 8 more

Open Access

https://doi.org/10.1038/s41598-021-83187-z

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Abstract

Two-dimensional (2D) heterostructure with atomically sharp interface holds promise for future electronics and optoelectronics because of their multi-functionalities. Here we demonstrate gate-tunable rectifying behavior and self-powered photovoltaic characteristics of novel p-GeSe/n-MoSe2 van der waal heterojunction (vdW HJ). A substantial increase in rectification behavior was observed when the devices were subjected to gate bias. The highest rectification of ~ 1 × 104 was obtained at Vg = − 40 V. Remarkable rectification behavior of the p-n diode is solely attributed to the sharp interface between metal and GeSe/MoSe2. The device exhibits a high photoresponse towards NIR (850 nm). A high photoresponsivity of 465 mAW−1, an excellent EQE of 670%, a fast rise time of 180 ms, and a decay time of 360 ms were obtained. Furthermore, the diode exhibits detectivity (D) of 7.3 × 109 Jones, the normalized photocurrent to the dark current ratio (NPDR) of 1.9 × 1010 W−1, and the noise equivalent power (NEP) of 1.22 × 10–13 WHz−1/2. The strong light-matter interaction stipulates that the GeSe/MoSe2 diode may open new realms in multi-functional electronics and optoelectronics applications.

Highlights

Two-dimensional (2D) heterostructure with atomically sharp interface holds promise for future electronics and optoelectronics because of their multi-functionalities
The high responsivity (R = 465 mAW−1), the detectivity D of 7.3 × 109 Jones, the normalized photocurrent to dark current ratio normalized photocurrent to the dark current ratio (NPDR) of 1.9 × 1010 W−1, the noise equivalent power NEP of 1.22 × 10–13 WHz−1/2, and the external quantum efficiency EQE of 670% were observed with a fast response time of 180 ms.The strong light-matter interaction in the device explicitly suggests that the p-GeSe/n-MoSe2 heterojunction p–n diode is a promising candidate for optoelectronics technologies
The NEP revealed that the photodetector, which is based on the p-GeSe/n-MoSe2 heterostructure, has the capability of detecting power as low as 1 0–13

Summary

Introduction

Two-dimensional (2D) heterostructure with atomically sharp interface holds promise for future electronics and optoelectronics because of their multi-functionalities.

Results

Conclusion