Abstract
A stable, niobium thin-film point-contact Josephson junction can be fabricated using rf magnetron sputtering and electron beam lithography. Constant-voltage steps based on a ac Josephson effect are observed up to a voltage level of 4 mV at 4.2 K when a 9-GHz microwave signal is applied. This voltage level is the highest for any thin-film weak link except for the tunnel junction.
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