Abstract
Nickel films were grown on Si〈100〉 by an electroless chemical method. Annealing of the metal films for 1 h each at 200, 450, 600, 800 and 1000°C in an argon atmosphere produced mixed phases of nickel silicide. Formation of the different phases, their identification and surface morphology were studied by X-ray diffraction and scanning electron microscopy. Low temperature growth of Ni 3Si 2, which is not commonly noticed in NiSi thin film reactions, has been observed after annealing at 200°C and its continued presence in mixed phases is marked after annealing even at a temperature as high as 1000°C.
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