Abstract
The electrical properties of Ni0.95Pt0.05-germanosilicide/Si1−xGex contacts on heavily doped p-type strained Si1−xGex layers as a function of composition and doping concentration for a given composition have been investigated. A four-terminal Kelvin-resistor structure has been fabricated by using the conventional complementary metal–oxide–semiconductor (CMOS) process to measure contact resistance. The results showed that the contact resistance of the Ni0.95Pt0.05-germanosilicide/Si1−xGex contacts slightly reduced with increasing the Ge fraction. The higher the doping concentration, the lower the contact resistivity. The contact resistance of the samples with doping concentration of 4 × 1019 cm−3 is nearly one order of magnitude lower than that of the samples with doping concentration of 5 × 1017 cm−3. In addition, the influence of dopant segregation on the contact resistance for the lower doped samples is larger than that for the higher doped samples.
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