Ni 층간박막에 따른 SnO2박막의 전기적, 광학적 물성 변화

Abstract

<TEX>$SnO_2$</TEX> single layer films (100 nm thick) and 2 nm thick Ni intermediated <TEX>$SnO_2$</TEX> films were deposited on glass substrate by RF and DC magnetron sputtering without intentional substrate heating and then the influence of the Ni interlayer on the electrical and optical properties of the films were investigated. As deposited <TEX>$SnO_2$</TEX> single layer films show the optical transmittance of 82.6% in the visible wavelength region and a resistivity of <TEX>$6.6{ \times}10^{-3}{\Omega}cm$</TEX>, while <TEX>$SnO_2/Ni/SnO_2$</TEX> trilayer films show a lower resistivity of <TEX>$2.7{ \times}10^{-3}{\Omega}cm$</TEX> and an optical transmittance of 76.3% in this study. Based on the figure of merit, it can be concluded that the intermediate Ni thin film effectively enhances the opto-electrical performance of <TEX>$SnO_2$</TEX> films for use as transparent conducting oxides in flexible display applications.