구리 기저 층이 In2O3/Cu 박막의 광학적, 전기적 특성에 미치는 영향

Abstract

Indium oxide (In₂O₃) single layer and In₂O₃/copper (Cu) bi-layer films were prepared on glass substrates by RF and DC magnetron sputtering without intentional substrate heating. In order to determine the effect of the Cu bottom layer on the optical, electrical and structural properties of In₂O₃ films, 3-㎚-thick Cu film was deposited on the glass substrate prior to deposition of the In₂O₃ films. As-deposited In2O3 films had an optical transmittance of 79% in the visible wavelength region and a sheet resistance of 2,300 Ω/□, while the In₂O₃/Cu film had optical and electrical properties that were influenced by the Cu bottom layer. In₂O₃/Cu films had a lower sheet resistance of 110 Ω/□ and an optical transmittance of 71%. Based on the figure of merit, it can be concluded that the Cu bottom layer effectively increases the performance of In2O3 films for use as transparent conducting oxides in flexible display applications.