Abstract
Due to their fast switching speed, knee-free forward characteristics, and a robust, low reverse recovery body diode, SiC MOSFETs are ideal candidates to replace silicon IGBTs in many high-power medium-voltage applications. 1700 V SiC MOSFETs have already been released to production at Wolfspeed based on its 2nd Gen technology. In this paper, we present our latest results in high voltage 4H-SiC MOSFET development. A low specific on-resistance of 4.7 mΩ⋅cm2 has been achieved on 1700 V, 20 mΩ 4H-SiC DMOSFETs at 250°C based on a 3rd generation planar MOSFET platform, which is less than half of the resistance of the previous generation devices. A detailed analysis has been carried out with respect to the static and dynamic characteristics, third quadrant conduction, and body diode reverse recovery charge, etc.
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