Abstract
This work evaluates the reverse recovery behavior of CREE's Gen 3 900V SiC MOSFET's body diode under different conditions. As the highest current rating discrete SiC MOSFET available up-to-now, CREE's Gen 3 900V 10 mΩ SiC MOSFET is the main device under test (DUT) in this work. Both static and dynamic characteristics of the DUT are presented. The factors that show effects on reverse recovery behavior in this work are forward conduction currents, junction temperatures, current commutation rates (gate resistors), supply voltages and die sizes. By comparing the CREE's Gen 3 900V 10 mΩ SiC MOSFET with the Gen 2 1200V ones (the main commercial products at present), the improvements in reverse recovery behavior of the Gen 3 900V over the Gen 2 1200V are discussed with several aspects. This work also discusses the junction capacitor and parasitic inductance effects on reverse behavior for SiC MOSFETs and how to clarify their effects in reverse recovery charge calculation.
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