Abstract
In this paper, the static and switching characterizations of a SiC MOSFET's body diode are presented. The static characterization of SiC MOSFET's body diode is carried out using a curve tracer and a double pulse test bench is built to characterize the inductive switching behavior of SiC MOSFET's body diode. The reverse recovery of SiC MOSFET's body diode is shown at different forward conduction currents, junction temperatures and current commutation slopes. In order to evaluate the performance of SiC MOSFET's body diode in different applications, an accurate physics-based diode model is introduced to perform simulations of SiC MOSFET's body diode. The parameter extraction procedure for this body diode model is given. The validation of the body diode model shows good agreement between simulation and experimental results, which proves the accuracy of the model.
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