Abstract
In order to expand the application of SiC MOSFET in a wide temperature range, the performance of SiC MOSFET from 25°C to 425°C is studied in this paper by taking the 1.2 kV QPM3-1200-0013D as an example. Different from the device characteristics given in the data sheet or previous articles at only three discrete temperatures or temperatures below 250°C, the temperature-dependent static characteristics of SiC MOS-FET are remeasured and nonlinearly characterized in a wide temperature range in this paper. In addition, considering the improvement effect of SiC Schottky barrier diode on reliability of SiC MOSFET's body diode, the temperature-dependent static characteristics of SiC Schottky barrier diode are also analyzed in this paper, which provides guidance for the high-temperature pre-design and application of SiC MOSFET.
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