Abstract
This paper presents a comprehensive on-line electrical characterization technique addressing the emerging Si/SiGe MOS technology. It demonstrates that the experimental high frequency and low frequency C- V characteristics of Si/SiGe heterostructure MOS capacitors can provide accurate material-, process-, and device-related information such as: the valence band offset, Si cap layer thickness, substrate doping, and MOSFET threshold voltages.
Full Text
Paper version not known (
Free)
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call