New plasma chemistries for etching GaN and InN: BI3 and BBr3

Abstract

Smooth, anisotropic etching of InN and GaN is obtained in BI3- or BBr3-based Inductively Coupled Plasmas. Etch selectivities of 100:1 were achieved for InN over both GaN and AlN in the BI3 mixtures, while for BBr3 discharges values of 100:1 for InN over AlN and 25:1 for InN over GaN were measured. The etched surface morphologies of InN and GaN with both mixtures are similar or better than those of control samples.