Abstract
Communication: There is a critical need for improved dielectric materials as substrates, and as buffer and insulator layers for HTS devices. Here the first in situ MOCVD growth of phase‐pure, epitaxially oriented YBCO lattice matched, low dielectric constant perovskites LnSrGaO4 (Ln = La and Pr) is described. The exclusively c‐axis oriented films have an ultimate surface roughness of 3.0 and 1.0 nm for the Pr and La materials, respectively. These films exemplify the requirements which are essential for fabrication of HTS thin‐film devices.
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