Abstract
A new pumped system and design method of XeCl* laser is accomplished in order to be applied in the interaction between laser and material, material plasma study, and to prepare quartz film, semiconductor film, CMR film, optical etching, and other kinds of films. Not only does high power XeCl laser systems adopt ns discharge, spark gap, UV preionization, glow discharge, design of symmetrical electrode, but also electrode calculation, reducing circuit inductance, laser resonator design are finished. The characteristics of the XeCl excimer laser are measured and analyzed. The wavelength is 308 nm. The pulse width is 18 ns. The output energy of a pulse is 300 mJ. The maximal repetition frequency is 5 Hz. It is shown that, under real experimental conditions, the growth output power of the XeCl excimer laser depends on the gas pressure, a suitable composition of mixture gas is He:Xe:He = 0.1%:1%:98.9%, and the gain of higher discharged voltage situation. The velocity equation of the kinetic model is tested by comparison with experimental data. A new high-power excimer laser is obtained with high energy, simple structure, high pump intensity, large activate volume, and stable performance. The laser action pushing the matter into extreme non-equilibrium leads to material ejection from the target, produces ablation, spilling eclosion.
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