Abstract
Traditional view on the growth mechanism of InAs nanowires (NWs) arrays in selective-area growth (SAG) holds that the growth of InAs NWs is based on the catalyst-free mechanism of faceting growth dominantly. Here, based on analyses and comparisons between the InAs NWs in unselective-area growth (USAG) on bare Si substrates and the InAs NWs arrays in SAG, we put forwards a new point of view that the growth mechanism of InAs NWs arrays in SAG is self-catalyzed vapor–liquid–solid (VLS) mechanism. By designing interrupted growth of InAs NWs in SAG and growth of InAs/GaSb heterostructured NWs in SAG, traces of In droplets were found during SAG of InAs NWs, which directly demonstrate self-catalyzed VLS growth mechanism for the InAs NWs arrays in SAG.
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