Abstract
The growth mechanism of III–V nanowires (NWs) grown without the use of any foreign catalysts, especially the growth mechanism of InAs NWs grown on Si substrates, is still an open question and controversial. To make it clear, we in detail investigated metal–organic chemical vapor deposition (MOCVD) growth of InAs NWs on Si substrates. Based on assuming the growth of InAs NWs by self-catalyzed growth mode, we firstly realized the growth of InAs/GaSb heterostructured NWs both in the axial direction by utilizing the catalysis of In droplet and in the radial direction (core/shell structure) by consuming In droplet. In particular, we found the presence of a certain amount of In atoms in the top droplet of the InAs/GaSb axially heterostructured NWs, which is the direct evidence of self-catalyzed vapor–liquid–solid (VLS) growth mode for the growth of InAs NWs on Si. All the results obtained here support that the InAs NWs are grown by self-catalyzed VLS mechanism. The reasons for the absence of In droplets in the growth of InAs NWs were also discussed in details.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
