Abstract
We present a 2-D tetra-lateral positionsensitive silicon photomultiplier (SiPM), featuring epitaxial quenching resistors and an intrinsic continuous cap resistive layer for charge division in this letter. The device has attractive advantages of less output electrodes and simple readout electronics, high position resolution, discrimination of photon number, high peak photon detection efficiency (PDE), compatible to regular SiPM with epitaxial quenching resistors, and simple fabrication technology. The barrel position distortion was analyzed and has been greatly alleviated by introducing a new distortion correction algorithm. As a result, the position measurement error is reduced from 109.7μm±101.5μm to 47.8μm±37.6μm for the device with an active area of 2.77mm× 2.77mm, a geometrical fill factor of ~41%, an effective cell pitch of ~10μm, and a peak PDE of ~30%. As the mean photoelectron number increased from 52 to 1040, the position resolution was improved from 182.9 to 19.4μm without any preamplifier.
Published Version
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