Progresses in large dynamic range silicon photomultipliers with bulk quenching resistor

Abstract

Silicon photomultiplier (SiPM) with bulk quenching resistor is one of the main SiPM technologies now under researches and developments. The device was first demonstrated at the Novel Device Laboratory (NDL). It has advantages of high micro cell density, short recovery time and has potential to alleviate the conflict between the high photon detection efficiency (PDE) and large dynamic range encountered by conventional SiPM, and it is beneficial to be applied in HEP calorimeters, PET, scintillator readout, radiation monitors and spectroscopy analysis, where high space resolution, large dynamic range and adequate high PDE are mandatory needed simultaneously. In the past years, with the optimization of the fabrication technology and structure of the device, the active area of the device has been increased from 1 mm × 1 mm to 2.2 mm × 2.2 mm, the peak PDE has been increased from 8% to 13%, while the density of the micro cells remains as large as 9000/mm2 and the recovery time remains to as low as ∼5ns. Application of the device to the detection of natural background radiation by using a lutetium orthosilicate (LSO) scintillator has been performed. Energy resolution of 1-to-1 coupling of this device and a 2 mm × 2 mm × 10 mm lutetium yttrium oxyorthosilicate (LYSO) crystal yielded an energy resolution of 11.8% by using radiation sources of 137Cs (662keV photons) without any high speed preamplifiers. These latest developments of SiPM with bulk quenching resistor will be presented in this record.