Abstract
A new contactless characterization technique based on microwave impedance measurement was developed and applied to the nondestructive measurement of deep level concentration in semi-insulating GaAs crystals. Using this new technique, the nonuniform distribution of EL2 was measured in GaAs wafers used for IC fabrication. Taking advantage of the nondestructive and contactless feature of this new technique, both the EL2 concentration and the threshold voltage (Vth) of metal semiconductor field effect transistors were measured in the same sample. By analyzing the relation of these two quantities, it is found that the activation efficiency of implanted Si atoms is lower in the EL2 richer region, and vice versa. A possible mechanism to explain the experimental data is discussed in relation with crystal nonstoichiometry.
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