Abstract
Crystal homogeneities in liquid-encapsulated Czochralski grown, semi-insulating GaAs (100) wafers were evidently improved by annealing at 800 °C for more than 12 h. The improvement was confirmed by observing cathodoluminescence intensity line scanning profile and by measuring field-effect transistor (FET) threshold voltage standard deviation σVth. σVth for 14-h and 18-h annealed/polished wafers exhibited about one-half that for a nonannealed wafer. Direct evidence of the improvement was also obtained by measuring dislocation effect on FET threshold voltage.
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