Abstract
Using an exact solution of two-dimensional Poisson's equation in cylindrical coordinates, a new analytical model comprising electrostatic potential, electric field, threshold voltage and subthreshold current for halo-doped surrounding-gate MOSFETs is developed. It is found that a new analytical model exhibits higher accuracy than that based on parabolic potential approximation when the thickness of the silicon channel is much larger than that of the oxide. It is also revealed that moderate halo doping concentration, thin gate oxide thickness and small silicon channel radius are needed to improve the threshold voltage characteristics. The derived analytical model agrees well with a three-dimensional numerical device simulator ISE.
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