Abstract
On the basis of two-dimensional (2D) potential analysis with effective conducting path effect (ECPE), a compact, analytical model for the threshold voltage in cylindrical, fully-depleted, surrounding-gate (SG) MOSFETs is derived. With various depths of the effective conducting path, the minimum channel potential induced by ECPE is used to develop the threshold voltage model. Besides the increased depth of the effective conducting path, both the thin silicon body and gate oxide can reduce the threshold voltage roll-off simultaneously. It is also found that the threshold voltage shift is dependent on the scaling factor of λ1L and characteristic factor of β. Both the high scaling factor and low characteristic factor are preferred to alleviate threshold voltage degradation. This paper not only provides a compact, analytical model but also offers efficient computation and analysis of the threshold voltage for the short-channel cylindrical, fully-depleted, SG MOSFETs.
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