New analog memory devices demonstrated using heterojunction acoustic charge transport device technology

Abstract

A new analog memory (AM) has been demonstrated using heterojunction acoustic charge transport (HACT) technology. The initial HACT AMs had storage time capabilities of 100 μs at 25 °C. The Schottky electrode storage array had 36 memory cells, each cell holding 2 charge packets, giving a maximum signal frequency of half the Nyquist frequency. Hold voltages in the 6–8 V range were found to be adequate, and effective storage was obtained at the same dc transport current level that resulted in the best charge transport efficiency. Storage times in the millisecond range are possible with cooling.