First HACT analog memory devices demonstrated

Abstract

A new analog memory (AM) has been demonstrated using heterojunction acoustic charge transport (HACT) technology. The initial HACT AMs had storage time capabilities in excess of 100 mu s. The Schottky electrode storage array had 36 memory cells, each cell holding two charge packets, giving a maximum signal frequency of half the Nyquist frequency, or 36 MHz. Hold voltages in the 5-8-V range were found to be adequate, and effective storage was obtained at the same DC transport current level that resulted in the best charge transport efficiency. Storage times in the millisecond range are possible with cooling to 0 degrees C. >