Abstract
A memristor is promising as an electronic synapse or next-generation nonvolatile memory, and its radiation resistance has recently received extensive attention for broader application fields. We fabricated Al/AlN/TiN crossbar arrays and investigated their resistive switching properties and neutron radiation-resistant performance. Al/AlN/TiN memory devices have many excellent features, such as operating currents down to 10 μA, memory endurance over 120 cycles, resistance window greater than 104, and retention time in excess of 104 s. More importantly, the memory devices with different resistance states still maintain remarkable resistive switching behaviors after irradiating with a dose of neutron radiation up to 1 × 1014 n/cm2, demonstrating outstanding potential application in radiation-resistant electronics.
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