Abstract
The degradation of GaAs planar doped barrier diodes subject to neutron irradiation is discussed. It is shown that for fluences as high as 10/sup 15/ cm/sup -2/, the diode characteristics are very well preserved, which strengthens the rationale for using these devices in place of Schottky diodes in harsh working environments such as nuclear instrumentation and space.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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